SILICON RF POWER MOSFETS
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SILICON RF POWER MOSFETS
by B Jayant Baliga (North Carolina State University, USA)
The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide- Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks.
Contents:
- RF Power Amplifiers
- MOSFET Physics
- Lateral-Diffused
MOSFETs
- Vertical-Diffused MOSFETs
- Charge-Coupled MOSFETs
- Super-Linear MOSFETs
- Planar Super-Linear MOSFETs
- Dual Trench MOSFETs
- Hot Carrier Injection Instability
- Synopsis
View Full Text (19,967 KB)
Readership: Reference guide for managers, RF semiconductor engineers,
and RF power amplifier designers working in the telecommunications(cellular networks) industry.
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320pp
Pub. date: Apr 2005
eISBN 978-981-256-932-5
Price: US$101
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